Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering
نویسندگان
چکیده
منابع مشابه
Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions
While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic ...
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2005
ISSN: 0021-4922
DOI: 10.1143/jjap.44.l1442